Device-Process Engineer for CMOS & MEMS Position Job in Ardmore 73401, Oklahoma Us

This individual will be part of a team working on developing an exciting new approach to infrared focal plane arrays (FPAs).  These FPAs are based on a new type of micromachined infrared sensor with incorporated nanostructures that improve the performance of uncooled FPAs by an order of magnitude.  Initially infrared detectors will be developed and fabricated in small arrays on a plain silicon wafer and packaged with commercial off-the-shelf (COTS) devices in a vacuum bottle.  Larger arrays will be developed using the exact approach used for these small arrays.  The larger array will be a monolithic silicon device/MEMS with infrared detectors, readout circuits, signal conditioning circuits, timing generation circuits, TV-type video generation circuits and video drivers for LCD panels.    Those larger arrays will be devices made using standard CMOS foundry processes with a few MEMS steps added to complete the 3D detector structures. The starting point for these larger arrays will be a complex mixed-signal CMOS device with submicron portions of detectors.  Portions of the 3D detector elements in the nano region must be mapped into and fabricated as part of the CMOS process. 

 

The Device-Process Engineer will review the existing very non-standard processes used in the prototype detector.  Processes used to make the prototype detector are non-standard in both materials and processing steps. This results in low yield.  The Device-Process Engineer will redesign all aspects of the detector elements and device structures such that all critical steps are performed in standard CMOS process steps of a particular CMOS foundry.  There will be a parallel position to this Device-Process Engineer for an analog-mixed signal circuit engineer.  The Device-Process Engineer will be working with that circuit engineer to ensure that the circuits and interfaces are suitable.  Initial devices will be made using a foundry and the Device-Process Engineer is expected to be familiar with device fabrication steps on CMOS processes of 120nm and smaller.   This project is expected to result in technological, performance and cost breakthroughs for uncooled far-infrared, mid-infrared and near-infrared sensors providing advantages in mass market production. 

 

The ideal candidate will bring 15+ years of fast-paced company experience in analog and mixed-signal device development along with strong knowledge of processes and how those processes are implemented on semiconductor machines.  There will be some support by other Amethyst staff that have some processing experience and some experience operating semiconductor equipment in a semiconductor fab.  Especially important is deep knowledge of three dimensional (3D) device structures for nanoscale circuit elements and micro-scale MEMS elements. The candidate must understand the processes required to produce the 3D structures. This candidate is expected to provide guidance to recent engineering graduates up to the PhD level based on extensive practical CMOS along with some process and production experience. He/She will also be responsible for guiding less experienced PhD engineers at Amethyst Research Inc. (Amethyst) in Ardmore, Oklahoma.  Amethyst is a world leader in high-performance infrared sensors and has sensor-related contracts with government agencies.  Amethyst has specialized semiconductor equipment on site to invent, develop, analyze and test leading-edge infrared materials and processes.  These advanced materials will not be used in this new infrared focal plane array. 

 

This position is for Device-Process Engineer is partially based at Amethyst to lead development on multiple contracts.   The candidate must be able to interface well with various customers and provide quality technological presentations and reports. Candidates should have detailed knowledge of CMOS camera sensors along with some experience with 90nm-65nm foundry processes, device libraries and be able to select process steps common to major foundries.


Tasks may include the following:

·        Quickly understand unusual detector devices and 3D structures and map that device to a CMOS process.

·        Use prior experience to identify the best sequence of process steps that optimize the creation of particular CMOS and MEMS 3D devices, which simultaneously achieve targeted electronic, mechanical and thermal properties as well as select suitable equipment and alternative equipment to implement process steps.

·        Oversee fabrication of prototype sensors in cleanrooms using MEMS and semiconductor fabrication equipment

·        Create process flow diagrams on steps used to fabricate sensors

·        Document and present why certain technology device structures, processes approaches/equipment are used and their impact on performance and projected yield along with production financial analysis and modeling.

·        Negotiate with vendors and other suppliers for capital equipment purchases and/or leases

·        Develop approaches to convert prototypes to production sensors using CMOS substrates from 3rd party suppliers

·        Create detailed specifications of sensor and sensor interfaces suitable for foundry price quotes.


Basic Qualifications:

·        Required Education: BS with 20+ years of company experience with at least10+ years of device-process- development along with understanding of CMOS foundry processes such as TSMC or Chartered.

·        Hands on experience in a CMOS company for device design and development with responsibility to lead or be the sole developer of a CMOS structure that has achieved production with high yield. 

·        Foundry relationship management for production and yield improvement.

·        Knowledge of analog and CMOS camera foundry processes and device libraries at TSMC, UMC, Chartered or IBM. 

·        Extensive knowledge of CMOS processes in terms of being able to determine an optimum sequence of process steps to create a desired 3D structure/profile and achieve desired electronic, mechanical and thermal properties.

·        Able to interface with experts in circuit design, optical design, MEMS design and MEMS production

·        Prior success to create quality proposals, reports and presentations suitable to win government contracts

·        Track record presenting technological information to groups and communicating orally and in written form.

·        US citizenship and no impediments to obtain a US government Dept. of Defense security clearance. 


Additional Qualifications Desired:

·        Developed mixed-signal CMOS and MEMS processes-devices currently in mass production

·        Knowledge of infrared sensing techniques, focal planar arrays and low noise electronics

·        Knowledge of production and test processes for microstructures and infrared device characterization

·        Participated in the design of a CMOS camera chip used in a digital camera.

·        A prior US government security clearance.

Email CV or Resume to careers@amethystresearch.com