GaN / GaAS Single Crystal Growth Expert Job in Suwon, Moscow And Moscow Region Russian Federation
EDUCATION:
Doctor of Philosophy (Ph.D.) or Master of Science (M.Sc.) Degree in Solid-State Physics, Material Science, Chemistry, or equivalent
EXPERIENCE:
Research-and-development (RnD) experience of more than 3 years
Experience in GaN / GaAS single crystal growth and epitaxi process (Hydride Vapor Phase Epitaxy [HVPE])
Knowledge of manufacturing novel compound semiconductors (such as GaN, etc.)
Experience in developing the HVPE processes and techniques
LOCATION:
South Korea
September 28, 2010
• Tags: GaAS Single Crystal Growth Expert Job in Suwon, GaN, Moscow And Moscow Region Russian Federation • Posted in: General